MULTILAYER CHIP BEAD

●FEATURE 1. High current and multiple size availability 2. High reliability due to an entirely monolithic structure 3. Low DC resistance structure of electrode prevents wasteful electric power consumption 4. Suppress EMI/RFI and to prevent self-oscillation in electronic products ●APPLICATIO

文件：197.91 Kbytes 页数：4 Pages

AITSEMI

创瑞科技

丝印：FBP；Package：SMBFlat；1500 W TVS in SMB Flat

Features • Peak pulse power: 1500 W (10/1000 μs) and 10 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range: from 5 V to 64 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: 1100 W

文件：598.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

MULTILAYER CHIP BEAD

●FEATURE 1. High current and multiple size availability 2. High reliability due to an entirely monolithic structure 3. Low DC resistance structure of electrode prevents wasteful electric power consumption 4. Suppress EMI/RFI and to prevent self-oscillation in electronic products ●APPLICATIO

文件：197.91 Kbytes 页数：4 Pages

AITSEMI

创瑞科技

MULTILAYER CHIP BEAD

●FEATURE 1. High current and multiple size availability 2. High reliability due to an entirely monolithic structure 3. Low DC resistance structure of electrode prevents wasteful electric power consumption 4. Suppress EMI/RFI and to prevent self-oscillation in electronic products ●APPLICATIO

文件：197.91 Kbytes 页数：4 Pages

AITSEMI

创瑞科技

MULTILAYER CHIP BEAD

●FEATURE 1. High current and multiple size availability 2. High reliability due to an entirely monolithic structure 3. Low DC resistance structure of electrode prevents wasteful electric power consumption 4. Suppress EMI/RFI and to prevent self-oscillation in electronic products ●APPLICATIO

文件：197.91 Kbytes 页数：4 Pages

AITSEMI

创瑞科技

MULTILAYER CHIP BEAD

●FEATURE 1. High current and multiple size availability 2. High reliability due to an entirely monolithic structure 3. Low DC resistance structure of electrode prevents wasteful electric power consumption 4. Suppress EMI/RFI and to prevent self-oscillation in electronic products ●APPLICATIO

文件：197.91 Kbytes 页数：4 Pages

AITSEMI

创瑞科技

MULTILAYER CHIP BEAD

●FEATURE 1. High current and multiple size availability 2. High reliability due to an entirely monolithic structure 3. Low DC resistance structure of electrode prevents wasteful electric power consumption 4. Suppress EMI/RFI and to prevent self-oscillation in electronic products ●APPLICATIO

文件：197.91 Kbytes 页数：4 Pages

AITSEMI

创瑞科技

MULTILAYER CHIP BEAD

●FEATURE 1. High current and multiple size availability 2. High reliability due to an entirely monolithic structure 3. Low DC resistance structure of electrode prevents wasteful electric power consumption 4. Suppress EMI/RFI and to prevent self-oscillation in electronic products ●APPLICATIO

文件：197.91 Kbytes 页数：4 Pages

AITSEMI

创瑞科技

MULTILAYER CHIP BEAD

●FEATURE 1. High current and multiple size availability 2. High reliability due to an entirely monolithic structure 3. Low DC resistance structure of electrode prevents wasteful electric power consumption 4. Suppress EMI/RFI and to prevent self-oscillation in electronic products ●APPLICATIO

文件：197.91 Kbytes 页数：4 Pages

AITSEMI

创瑞科技

MULTILAYER CHIP BEAD

●FEATURE 1. High current and multiple size availability 2. High reliability due to an entirely monolithic structure 3. Low DC resistance structure of electrode prevents wasteful electric power consumption 4. Suppress EMI/RFI and to prevent self-oscillation in electronic products ●APPLICATIO

文件：197.91 Kbytes 页数：4 Pages

AITSEMI

创瑞科技