High-Current, High- and Low-Side, Gate-Drive IC

Description The FAN7392 is a monolithic high- and low-side gate drive IC, that can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Features

文件：1.7309 Mbytes 页数：18 Pages

FAIRCHILD

仙童半导体

High-Current, High- and Low-Side, Gate-Drive IC

文件：1.62802 Mbytes 页数：18 Pages

FAIRCHILD

仙童半导体

High-Current, High- and Low-Side, Gate-Drive IC

文件：2.06496 Mbytes 页数：20 Pages

ONSEMI

安森美半导体

625V，可兼容 3.3/5V 输入逻辑，3/3A 接收/源电流，高压和低压侧门极驱动，带 SD 保护

FAN7392 是单片高端和低端栅极驱动 IC，可以驱动工作电压最高达 +600 V 的高速 MOSFET 和 IGBT。它具有缓冲输出级，且所有NMOS晶体管设计为具有高脉冲电流驱动能力和最低交叠导通。飞兆的高压流程和共模噪声消除技术可使高侧驱动器在高 dv/dt 噪声环境下稳定运行。先进的电平转换电路，能使高侧栅极驱动器的工作电压在 VBS=15V时高达 VS=-9.8V（典型值）。逻辑输入与兼容标准CMOS或LSTTL输出，低至3.3V逻辑。UVLO电路可防止VCC和VBS低于指定的阈值电压时发生故障。高电流和低输出压降的特性，使得该器件适合半桥和全桥转换器，如开关电源和高功率 DC-D • 浮动通道可实现高达+600V的自举运行\n• 3A/3A的典型源电流/灌电流驱动能力\n• 共模 dv/dt 噪声消除电路\n• 兼容3.3V逻辑\n• 分离逻辑电源(VDD)，范围为3.3V至20V\n• VCC和VBS欠压闭锁\n• 逐周期边沿触发关断逻辑\n• 适用于两个通道的匹配传播延迟\n• 输出与输入信号同相\n• 采用14-DIP和16-SOP（宽）封装;

ONSEMI

安森美半导体

High-Current, High- and Low-Side, Gate-Drive IC

Description The FAN7392 is a monolithic high- and low-side gate drive IC, that can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Features

文件：1.7309 Mbytes 页数：18 Pages

FAIRCHILD

仙童半导体

High-Current, High- and Low-Side, Gate-Drive IC

Description The FAN7392 is a monolithic high- and low-side gate drive IC, that can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Features

文件：1.7309 Mbytes 页数：18 Pages

FAIRCHILD

仙童半导体

High-Current, High- and Low-Side, Gate-Drive IC

Description The FAN7392 is a monolithic high- and low-side gate drive IC, that can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Features

文件：1.7309 Mbytes 页数：18 Pages

FAIRCHILD

仙童半导体

High-Current, High- and Low-Side, Gate-Drive IC

文件：1.62802 Mbytes 页数：18 Pages

FAIRCHILD

仙童半导体

High-Current, High- and Low-Side, Gate-Drive IC

文件：1.62802 Mbytes 页数：18 Pages

FAIRCHILD

仙童半导体

High-Current, High- and Low-Side, Gate-Drive IC

文件：2.06496 Mbytes 页数：20 Pages

ONSEMI

安森美半导体