丝印：F50N06；Package：TO-220F；50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.18 Kbytes 页数：10 Pages

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东海半导体

丝印：F50N06；Package：TO-220F；50A 60V N-channel Enhancement Mode Power MOSFET

文件：807.77 Kbytes 页数：10 Pages

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东海半导体

丝印：F50N06；Package：TO-220F；50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.72 Kbytes 页数：10 Pages

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东海半导体

丝印：F50N06；Package：TO-220F；50A 60V N-channel Enhancement Mode Power MOSFET

文件：812.59 Kbytes 页数：10 Pages

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东海半导体

丝印：F50N06；Package：TO-220F；50A 60V N-channel Enhancement Mode Power MOSFET

文件：807.99 Kbytes 页数：10 Pages

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东海半导体

丝印：F50N06；Package：TO-220F；50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.45 Kbytes 页数：10 Pages

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东海半导体

MOSFET

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东海半导体

N-Channel Enhancement MOSFET

Features  VDS=60V, ID=5A  RDS(ON)=35mΩ@VGS=10V(Typ.)  RDS(ON)=39mΩ@VGS=4.5V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Main Applications  Battery Protection  Load Switch  Power Management

文件：2.11551 Mbytes 页数：5 Pages

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唯圣电子

50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

文件：412.33 Kbytes 页数：8 Pages

INTERSIL

50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

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