RECTIFIER, up to 6kV, 100mA, 300ns

文件：121.71 Kbytes 页数：3 Pages

SEMTECH

先之科

AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE

AXIAL LEADED HERMETICALLY SEALEDHIGH VOLTAGE FAST RECTIFIER DIODE • Lowreverse recovery time • High thermal shock resistance • Hermetically sealed with Metoxilrte metal oxide • Lowswitching losses • Soft, non-snap off, recovery characteristics

文件：143.48 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

DC-HVDC C ONVERTER

10W Features • Output Voltages from 100V to 12kV • Output Voltage Proportional to Input • Low Turn-on Voltage 0.7VDC • Input to Output Isolation • Dual Output Option • Arc & Short Circuit Protected • No Minimum Load • 3 Year Warranty Typical Applications • Mass Spectrometry • Elect

文件：3.03034 Mbytes 页数：6 Pages

XPPOWER

1.8V 2 Gbit SPI-NAND Flash Memory

FEATURES  Single-level cell (SLC) technology  Organization - Page size x1: 2176 bytes (2048 + 128 bytes) - Block size: 64 pages (128K + 8K bytes) - Device size: 2Gb (2 planes, 1024 blocks per plane)  Standard and extended SPI-compatible serial bus interface - Instruction, address on 1

文件：1.67768 Mbytes 页数：51 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

1.8V 2 Gbit SPI-NAND Flash Memory

FEATURES  Single-level cell (SLC) technology  Organization - Page size x1: 2176 bytes (2048 + 128 bytes) - Block size: 64 pages (128K + 8K bytes) - Device size: 2Gb (2 planes, 1024 blocks per plane)  Standard and extended SPI-compatible serial bus interface - Instruction, address on 1

文件：1.67768 Mbytes 页数：51 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

1.8V 2 Gbit SPI-NAND Flash Memory

FEATURES  Single-level cell (SLC) technology  Organization - Page size x1: 2176 bytes (2048 + 128 bytes) - Block size: 64 pages (128K + 8K bytes) - Device size: 2Gb (2 planes, 1024 blocks per plane)  Standard and extended SPI-compatible serial bus interface - Instruction, address on 1

文件：1.67768 Mbytes 页数：51 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

3.3V 2 Gbit SPI-NAND Flash Memory

FEATURES  Single-level cell (SLC) technology  Organization - Page size x1: 2176 bytes (2048 + 128 bytes) - Block size: 64 pages (128K + 8K bytes) - Device size: 2Gb (2 planes, 1024 blocks per plane)  Standard and extended SPI-compatible serial bus interface - Instruction, address on

文件：1.60712 Mbytes 页数：52 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

3.3V 2 Gbit SPI-NAND Flash Memory

FEATURES  Single-level cell (SLC) technology  Organization - Page size x1: 2176 bytes (2048 + 128 bytes) - Block size: 64 pages (128K + 8K bytes) - Device size: 2Gb (2 planes, 1024 blocks per plane)  Standard and extended SPI-compatible serial bus interface - Instruction, address on

文件：1.60712 Mbytes 页数：52 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

N-Channel Enhancement MOSFET

Features  VDS=60V, ID=5A  RDS(ON)=35mΩ@VGS=10V(Typ.)  RDS(ON)=39mΩ@VGS=4.5V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Main Applications  Battery Protection  Load Switch  Power Management

文件：2.11551 Mbytes 页数：5 Pages

GWSEMI

唯圣电子

50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

文件：412.33 Kbytes 页数：8 Pages

INTERSIL