丝印：F30；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

DESCRIPTION The SP6200 and SP6201 are CMOS LDOs designed to meet a broad range of applications that require accuracy, speed and ease of use. These LDOs offer extremely low quiescent current which only increases slightly under load, thus providing advantages in ground current performance over bipo

文件：144.42 Kbytes 页数：10 Pages

Sipex

丝印：F30；Package：SMAflat；Low drop power Schottky rectifier

Description Single chip Schottky rectifiers designed for high frequency miniature switched mode power supplies such as adaptors and on board DC/DC converters. Packaged in SMA, SMA Flat and SMB Flat, the STPS2L30 is ideal for use in parallel with MOSFETs in synchronous rectification. Features •

文件：145.73 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：F30；Package：SOD323；Surface Mount Switching Diode

文件：2.18718 Mbytes 页数：18 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

丝印：F30；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

文件：426.37 Kbytes 页数：17 Pages

Sipex

丝印：F30；Package：6-PinSOT23-6；36M HD Composite Video Filter Driver With Shutdown Function

文件：517.89 Kbytes 页数：9 Pages

3PEAK

思瑞浦

丝印：F30；Package：SOT-23-3L；Low power consumption, CMOS LDO

文件：1.18563 Mbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：F30；Package：SOT-23-3L；Low power consumption, CMOS LDO

文件：1.18563 Mbytes 页数：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印：F30N06LE；Package：TO-220AB；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were

文件：91.17 Kbytes 页数：6 Pages

HARRIS

丝印：F30N06LE；Package：TO-220AB；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：80.85 Kbytes 页数：8 Pages

Intersil

丝印：F3035EJ；Package：PG-TDSO-8-31；Smart Low-Side Power Switch

文件：3.35733 Mbytes 页数：59 Pages

Infineon

英飞凌