N-Channel Enhancement MOSFET

Features • VDS=100V, ID=2A • RDS(ON)=220mΩ@VGS=10V(Typ.) • RDS(ON)=240mΩ@VGS=4.5V(Typ.) • High Power and current handing capability • Lead free product is acquired • Surface Mount Package Main Applications • Battery Protection • Load Switch • Power Management

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GWSEMI

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N-Channel Enhancement Mode Power MOSFET

文件：3.42734 Mbytes 页数：7 Pages

FOSTER

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N-Channel Enhancement Mode Power MOSFET

文件：357.81 Kbytes 页数：6 Pages

HMSEMI

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N-Channel Enhancement Mode Power MOSFET

文件：354.11 Kbytes 页数：6 Pages

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