F2N60L-TN3-T技术资料参数库存现货友顺UTC-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
F2N60L-TN3-T	文件：229.1 Kbytes Page：6 Pages	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC F2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i 文件：229.1 Kbytes 页数：6 Pages	UTC 友顺	UTC
HX2N60L-TN3-R	文件：1.22144 Mbytes Page：5 Pages	N-Channel MOSFET 文件：1.22144 Mbytes 页数：5 Pages	SIPOWER	SIPOWER
HX2N60L-TN3-T	文件：1.22144 Mbytes Page：5 Pages	N-Channel MOSFET 文件：1.22144 Mbytes 页数：5 Pages	SIPOWER	SIPOWER
2N60L-TN3-R	文件：1.08611 Mbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET 文件：1.08611 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
2N60L-TN3-R	文件：142.66 Kbytes Page：8 Pages	2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in 文件：142.66 Kbytes 页数：8 Pages	UTC 友顺	UTC
2N60L-TN3-R	文件：304.09 Kbytes Page：7 Pages	N-CHANNEL POWER MOSFET 文件：304.09 Kbytes 页数：7 Pages	UTC 友顺	UTC

更多F2N60L-TN3-T供应商更新时间2025-10-7 9:31:00