丝印：F20N50；Package：TO-220F；20A 500V N-channel Enhancement Mode Power MOSFET

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WXDH

东海半导体

200-550V MOSFET

WXDH

东海半导体

高压MOSFET

Jingdao

晶导

TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surfa

文件：273.05 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMO

文件：193.73 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. FEATURES • Repet

文件：93.34 Kbytes 页数：7 Pages

PHI

PHI