Ultrafast Recovery Power Rectifier

文件：155.4 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Power MOSFET

文件：160.96 Kbytes 页数：2 Pages

SHINDENGEN

Power MOSFET

文件：180.25 Kbytes 页数：4 Pages

SHINDENGEN

双向可控硅

Jilai

吉莱微

2000V Axial Leaded Hermetically Sealed High Voltage Fast Rectifier Diode

Semtech

先之科

AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE SUPERFAST RECTIFIER DIODE

NJS

Package：轴向；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 2KV 350MA AXIAL

Semtech Corporation

丝印：F2001；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：2.35537 Mbytes 页数：102 Pages

TI

德州仪器

丝印：F2001；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：2.35537 Mbytes 页数：102 Pages

TI

德州仪器

丝印：F2001；Package：TSSOP(PW)；MIXED SIGNAL MICROCONTROLLER

1FEATURES • Low Supply Voltage Range 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architecture,

文件：2.35537 Mbytes 页数：102 Pages

TI

德州仪器