Thin Stackohm Vitreous Enamel Power

‘Thin’ Stackohm® Vitreous Enamel Power When limited space is a consideration, choose Ohmite’s “thin” stackable 250 Type resistors. These oval-shaped ceramic-core resistors feature a low profile to permit installation in spaces with height restrictions. They are also equipped with integral mountin

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OHMITE

20.0 Ampere Insulated Common Cathode Ultra Fast Recovery Rectifiers

Features Low forward voltage drop High current capability High surge current capability Low reverse leakage current Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems ThinkiSemi dual FRD/FRED

文件：741.08 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

20.0 Ampere Insulated Common Cathode Ultra Fast Recovery Rectifiers

Features Low forward voltage drop High current capability High surge current capability Low reverse leakage current Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems ThinkiSemi dual FRD/FRED

文件：741.08 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

Super Fast Recovery Rectifiers(300V 20A)

Super fast Recovery Rectifiers

文件：338.37 Kbytes 页数：6 Pages

SHINDENGEN

20.0 Ampere Insulated Common Cathode Ultra Fast Recovery Rectifiers

Features Low forward voltage drop High current capability High surge current capability Low reverse leakage current Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems ThinkiSemi dual FRD/FRED

文件：741.08 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ High dv/dt and avalanche capabilities ■ 100 Avalanch

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STMICROELECTRONICS

意法半导体

P-Channel Enhancement MOSFET

Features • VDS=-100V, ID=-20A • RDS(ON)=86mΩ@VGS=-10V(Typ.) • RDS(ON)=90mΩ@VGS=-4.5V(Typ.) • High Power and current handing capability • Lead free product is acquired • Surface Mount Package Main Applications • Battery Protection • Load Switch • Power Management

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GWSEMI

唯圣电子

Ultrafast Recovery Power Rectifier

Features • Ultrafast with Soft Recovery :

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Fairchild

仙童半导体

Ultrafast Recovery Power Rectifier

Features • Ultrafast Switching Speed : trr

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Fairchild

仙童半导体

20A, 600V Ultrafast Rectifier

The FFPF20UP60DN is a ultrafast rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. It’s low s

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Fairchild

仙童半导体