F1102

RF to IF Dual Downconverting Mixer

FEATURES •DualPathforDiversitySystems •IdealforMulti-CarrierSystems •MIMOfriendly:-6dBmminLOdrive •9dBGain •Ultralinear:+41dBmIP3O(350MHzIF) •LowNF~10dB •200@outputimpedance •Ultrahigh+13dBmP1dBI •PinCompatiblew/Existingsolutions •6x636pinp

F1102

RF to IF Dual Downconverting Mixer

FEATURES •DualPathforDiversitySystems •IdealforMulti-CarrierSystems •8.5dBGain(200MHzIF) •Ultralinear+38dBmIP3O(350MHzIF) •Ultralinear+40dBmIP3O(200MHzIF) •LowNF

F1107

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeaturesgoldmetalforgreatlyextendedlifetime

F1108

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfet™processfeaturesgoldmetalforgreatlyextendedlifetim

F1100

RF to IF Dual Downconverting Mixer

F1100

RF to IF Dual Downconverting Mixer

F1100AA01

Most Economical Design

F1100AA03

Most Economical Design

F1100AA06

Most Economical Design

F1100AA10

Most Economical Design