MOS

EVERPOWER

意发功率半导体

PolarHV HiPerFET Power MOSFET ISOPLUS 220

文件：97.86 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.77Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：324.23 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive

文件：100 Kbytes 页数：4 Pages

IXYS

艾赛斯