IRH7450SE

TRANSISTORN-CHANNEL(BVdss=500V,Rds(on)=0.51ohm,Id=11A)

InternationalRectifier’sRADHardTMHEXFET®MOSFETtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEven

IRH7450SE

SimpleDriveRequirements

IRHM7450

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA)

IRHM7450

SimpleDriveRequirements

IRHM7450

REPETITIVEAVALANCHEANDdv/dtRATED

InternationalRectifier’sRAD-HardTMHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffe

IRHM7450SE

TRANSISTORN-CHANNEL(BVdss=500V,Rds(on)=0.51ohm,Id=12A)

N-CHANNELSINGLEEVENTEFFECT(SEE)RADHARD 500Volt,0.51Ω,(SEE)RADHARDHEXFET InternationalRectifier’s(SEE)RADHARDtechnologyHEXFETsdemonstratevirtualimmunitytoSEEfailure.Additionally,underidenticalpre-andpost-radiationtestconditions,InternationalRectifier’sR

IRHM7450SE

SimpleDriveRequirements

IRHN7450

SimpleDriveRequirements

IRHN7450

HEXFETTRANSISTOR

500Volt,0.45Ω,MEGARADHARDHEXFET InternationalRectifier’sRADHARDtechnologyHEXFETsdemonstrateexcellentthresholdvoltagestabilityandbreakdownvoltagestabilityattotalradiaitiondosesashighas1x106Rads(Si).Underidenticalpre-andpost-irradiationtestconditions,Internationa

IRHN7450SE

SimpleDriveRequirements