Terminals & Cable Ties

Terminals Legend Available in insulated and non-insulated options. See insulation options throughout this booklet for detailed information per product.

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PANDUITPanduit Corp

Panduit公司Panduit科技有限公司

GaAs, SPDT Switch, Nonreflective,100 MHz to 12 GHz

FEATURES Nonreflective 50 Ω design Low insertion loss 1.5 dB typical to 6 GHz 2.5 dB typical to 12 GHz High isolation 50 dB typical to 6 GHz 45 dB typical to 12 GHz High input linearity P0.1dB: 28 dBm typical at VCTRL = −5 V P1dB: 30 dBm typical at VCTRL = −5 V IP3: 48 dBm High power h

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Radio frequency (RF) range: 6 GHz to 10 GHz

GENERAL DESCRIPTION The HMC520A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) mixer in a 24-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package. The device can be used as either an image reject mixer or a single s

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GaAs, MMIC, I/Q Mixer

GENERAL DESCRIPTION The HMC521ALC4 is a compact, gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), inphase quadrature (I/Q) mixer in a RoHS compliant, 24-terminal ceramic leadless chip carrier (LCC) package. This device can be used as either an image reject mixer or a singl

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24-terminal ceramic leadless chip carrier package

GENERAL DESCRIPTION The HMC557A is a general-purpose, double balanced mixer in a 24-terminal, ceramic leadless chip carrier, RoHS-compliant package. The device can be used as an upconverter or downconverter from 2.5 GHz to 7.0 GHz. This mixer is fabricated in a gallium arsenide (GaAs) metal semic

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Conversion loss: 7.5 dB typical at 5.5 GHz to 10 GHz

GENERAL DESCRIPTION The HMC558A is a general-purpose, double-balanced mixer in a leadless RoHS compliant SMT package that can be used as an upconverter or downconverter between 5.5 GHz and 14 GHz. This mixer is fabricated in a gallium arsenide (GaAs) metal semiconductor field effect transistor (M

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60 GHz Millimeterwave Transmitter, 57 GHz to 64 GHz

FEATURES Frequency band: 57 GHz to 64 GHz RF signal bandwidth: up to 1.8 GHz Output power for 1 dB compression: 15 dBm Gain: 5 dB to 35 dB Digital and analog RF and IF gain control Integrated frequency synthesizer Integrated image reject filter Partially external loop filter Support for e

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Nonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz

GENERAL DESCRIPTION The HMC7992is a general-purpose, nonreflective, 0.1 GHz to 6.0 GHz, silicon, single-pole, four-throw (SP4T) switch in a leadless, surface-mount package. The switch is ideal for cellular infrastructure applications, offers high isolation of 45 dB typical at 2 GHz, and a low i

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11.90 GHz to 18.30 GHz Quadband VCO

GENERAL DESCRIPTION The HMC8362 is a gallium arsenide (GaAs), quadband, monolithic microwave integrated circuit (MMIC), voltage controlled oscillator (VCO) designed to offer wideband capabilities without compromising on phase noise performance. The device integrates four independent, narrow-band

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Littelfuse EV Fuse EV1K SERIES

Description The Littelfuse EV1K series is an electric vehicle (EV) fuse designed to protect high-voltage, high-current on-board applications in electric and hybrid vehicles as well as offboard charging. It was specifically built from the ground up to meet the stringent requirements and standar

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Littelfuse

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