ESD Protection Diode

Features • Low Clamping Voltage • Small Body Outline Dimensions: 0.62 mm x 0.32 mm • Low Body Height: 0.3 mm • Stand−off Voltage: 3.3 V • IEC61000−4−2 Level 4 ESD Protection • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • USD Card Protect

文件：323.16 Kbytes 页数：8 Pages

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安森美半导体

3.3 V 双向微型封装 ESD 保护二极管

The ESDM3032 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast\nresponse time, make these parts ideal for ESD protection on designs where board space is at a pr • High Peak Pulse current capability\n• Being capable of withstanding more than 9 A, 8x20µs Surge, the ESDM3032 delivers high level of protection against electrical overstress to the application\n• Low Clamping voltage\n• Clamping under 9 V at 9 A (8x20µs), the ESDM3032 ensures the survivability of ;

ONSEMI

安森美半导体

丝印：3；Package：X3DFN2；ESD Protection Diode

Features • Low Clamping Voltage • Small Body Outline Dimensions: 0.62 mm x 0.32 mm • Low Body Height: 0.3 mm • Stand−off Voltage: 3.3 V • IEC61000−4−2 Level 4 ESD Protection • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • USD Card Protect

文件：323.16 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Package：0201（0603 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电路保护 TVS - 二极管 描述：TVS DIODE 3.3VWM 9.7VC 2X3DFN

ONSEMI

安森美半导体