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ESD451

ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel

文件:836.7 Kbytes 页数:15 Pages

TI

德州仪器

ESD451

ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 4.4 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely

文件:685.89 Kbytes 页数:12 Pages

TI

德州仪器

ESD451

ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel

文件:804.29 Kbytes 页数:15 Pages

TI

德州仪器

ESD451

ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD

文件:1.58786 Mbytes 页数:22 Pages

TI

德州仪器

ESD451

采用 0201 封装的 0.5pF、5.5V、30KV 双向 ESD 保护器件

ESD451 是一款双向 ESD 保护二极管,用于保护数据线路和其他 I/O 端口。 ESD451 的额定 ESD 冲击消散值高达 ±30kV,符合 IEC 61000-4-2 国际标准(高于 4 级)。\n\n该器件具有 0.5pF(典型值)IO 电容,可为 USB 3.0 等协议提供高速接口保护。超低的动态电阻 (0.19Ω) 和钳位电压(16A TLP 时为 10.4V)可针对瞬态事件提供系统级保护。\n\n该器件采用微型封装并具有 ±30kV ESD 等级和 6.2 A 浪涌,可提供强大的瞬态保护,用于保护便携式电子产品和其他空间受限类应用(如可穿戴设备)中的 5.5V 电源轨和数据线 • IEC 61000-4-2 level 4 ESD protection \n• ±30 kV air gap discharge\n• IEC 61000-4-5 surge protection \n• IO capacitance: \n• DC breakdown voltage: ±8 V (typical)\n• Extremely low ESD clamping voltage \n• R DYN: 0.19 Ω\n• Industrial temperature range: –40°C to +125°C\n• Space-saving industry standar;

TI

德州仪器

ESD451_V01

ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel

文件:836.7 Kbytes 页数:15 Pages

TI

德州仪器

ESD451_V01

ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD

文件:1.58786 Mbytes 页数:22 Pages

TI

德州仪器

ESD451DPLR

丝印:G;Package:X2SON;ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel

文件:836.7 Kbytes 页数:15 Pages

TI

德州仪器

ESD451DPLR

ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD

文件:1.58786 Mbytes 页数:22 Pages

TI

德州仪器

ESD451DPLR

ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel

文件:804.29 Kbytes 页数:15 Pages

TI

德州仪器

技术参数

  • Peak pulse power (8/20 μs) (max) (W):

    57

  • Vrwm (V):

    5.5

  • Bi-/uni-directional:

    Bi-directional

  • Number of channels:

    1

  • IO capacitance (typ) (pF):

    0.5

  • Clamping voltage (V):

    10.4

  • Breakdown voltage (min) (V):

    7

  • 封装:

    X2SON (DPL)

  • 引脚:

    2

  • 尺寸:

    0.18 mm² 0.6 x 0.3

供应商型号品牌批号封装库存备注价格
TI
25+
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20948
样件支持,可原厂排单订货!
询价
TI
25+
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21000
正规渠道,免费送样。支持账期,BOM一站式配齐
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LEIDITECH/雷卯
2026+PB
SOD-323
90000
全新Cnnpchip
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SEMITEH
24+
65300
一级代理/放心购买!
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Semitehelec
2021+
SOD-323
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
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SEMITEH
23+
7300
专注配单,只做原装进口现货
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Semitehelec
25+
SOD-323
10065
原装正品,有挂有货,假一赔十
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24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
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Semitehelec
24+
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5000
全新原装正品,现货销售
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Semitehelec
24+
SOD-323
5000
只有原装
询价
更多ESD451供应商 更新时间2026-4-20 10:19:00