丝印：KE；Package：SOD-523；Transient Voltage Suppressors for ESD Protection

Features 166~266 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one unidirectional I/O line Low clamping voltage Working voltages 3.3V ~ 36V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact): 3.3V ~ 15V IEC61000-4-2 (ESD) ±15kV (air), ±10kV (contact): 18V ~ 36V Ap

文件：2.29886 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：DT；Package：SOD-523；Transient Voltage Suppressors for ESD Protection

Features 50 ~ 123 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line(Bidirectional) Low clamping voltage Working voltages 3.3V ~ 12V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) 3.3V and 5V IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) 8V and 12V IEC6

文件：2.30116 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

Cellular phones

Features • Small Body Outline Dimensions • Low Body Height • Peak Power up to 200 Watts @ 8 x 20 _s Pulse • Low Leakage current • Response Time is Typically 16 kV) per Human Body Model

文件：800.99 Kbytes 页数：3 Pages

UMW

友台半导体

丝印：UT5；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features 1098~ 1980 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line (unidirectional) Low clamping voltage Working voltages: 3.3V~48V Low leakage current IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (Lighting) 13.8 ~ 100A (8/20μs) IEC61000-4-2 (ESD) ±30kV (air), ±30kV (con

文件：5.10371 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：5L；Package：SOD-523；Transient Voltage Suppressors for ESD Protection

Features Low Capacitance 0.5 pF Protects One unidirectional I/O Line Low clamping voltage Working voltages : 5.0V Low leakage current Response Time is Typically

文件：2.31343 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：SA5；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features 100 ~ 234 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line (unidirectional) Working voltages: 3.3V ~ 24V Low leakage current IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-2 (ESD) ±25kV (air), ±25kV (contact) : 3.3 ~12V IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) :

文件：2.88139 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：E5SP；Package：SOD-523F；Transient Voltage Suppressors for ESD Protection

Features 60 Watts Peak Pulse Power per Line (tp=8/20μs) Protects One High Speed I/O Bidirectional Line Low clamping voltage Working voltages : 5.0V Low leakage current IEC61000-4-2(ESD):±15kV (air discharge) ±8kV (contact discharge); Applications Cell Phone Handsets and Accessories Vid

文件：2.85481 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：CL5；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features 100 ~ 234 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line (Bidirectional) Working voltages: 3.3 ~ 24V Low leakage current IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) : 3.3 ~ 15V IEC61000-4-2 (ESD) ± 15kV (air), ± 8kV (contact) :

文件：2.92008 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：KE；Package：SOD-523；Transient Voltage Suppressors for ESD Protection

Features Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 65~265 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one unidirectional I/O line Low Clamping Voltage Working Voltages: 3.3~36V Low leakage current IEC61000-4-2(ESD):±30kV(air),±30kV(contact): 3.3V~15V IEC61000-4-2(ESD

文件：2.22583 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：DT；Package：SOD-523；Transient Voltage Suppressors for ESD Protection

Features Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 50~120 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one bidirectional I/O line Low Clamping Voltage Working Voltages: 3.3V,5V,8V,12V Low leakage current EC61000-4-2(ESD):±30kV(air),±30kV(contact): 3.3V and 5V IEC61000

文件：2.22399 Mbytes 页数：4 Pages

UNSEMI

优恩半导体