金属（氧化物）覆膜固定电阻器

Panasonic

松下

金属（氧化物）覆膜固定电阻器

Panasonic

松下

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ202 is a P-channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VTR cameras and hea

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RENESAS

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P-CHANNEL MOS FET FOR SWITCHING

The 2SJ202 is an P-chnnal vertical type MOS FET which can be driven by 2.5 V power supply. Features ● Directly driven by ICs having a 3V power supply. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the bias

文件：406.88 Kbytes 页数：6 Pages

NEC

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