4 Line Common Mode Filter

4 Line Common Mode Filter • Impedance limits per chart measured using HP4193A Vector Impedance Meter • Package transfer-molded epoxy suitable for auto-insertion • Part is symmetrical : May be inserted either way • Temperature Rise 45°C Max. @ 25°C Ambient • Maximum Current : 1 Adc/W

文件：54.8 Kbytes 页数：1 Pages

PCA

Common Mode Chokes

PCA

High Efficiency Heterojunction Power FET

[Excelics] High Efficiency Heterojunction Power FET • +39.5dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • 0.4 X 12,000 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY

文件：31.36 Kbytes 页数：2 Pages

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High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET • +39.5dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • 0.4 X 12,000 MICRON RECESSED “MUSHROOM” GATE • Si3N4PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILIT

文件：31.85 Kbytes 页数：2 Pages

EXCELICS

High Efficiency Heterojunction Power FET

• +29.5dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN FOR EPA120B AND 10.5dB FOR EPA120BV AT 18GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • EPA120BV WIT

文件：38.71 Kbytes 页数：2 Pages

EXCELICS

High Efficiency Heterojunction Power FET

• +29.5dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN FOR EPA120B AND 10.5dB FOR EPA120BV AT 18GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • EPA120BV WIT

文件：38.71 Kbytes 页数：2 Pages

EXCELICS

High Efficiency Heterojunction Power FET

FEATURES • +29.5dBm TYPICAL OUTPUT POWER • 19.5dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 30mA PER

文件：50.55 Kbytes 页数：2 Pages

EXCELICS

High Efficiency Heterojunction Power FET

FEATURES • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE • +29 dBm OUTPUT POWER AT 1dB COMPRESSION • 18.0 dB GAIN AT 2 GHz • 0.5x1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELI

文件：83.92 Kbytes 页数：1 Pages

EXCELICS

High Efficiency Heterojunction Power FET

[Excelics] High Efficiency Heterojunction Power FET • +29.5dBm TYPICAL OUTPUT POWER • 9.5dB TYPICAL POWER GAIN AT 18GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND H

文件：42.04 Kbytes 页数：2 Pages

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High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET • +29.5dBm TYPICAL OUTPUT POWER • 9.5dB TYPICAL POWER GAIN FOR EPA120E AND 10.5dB FOR EPA120EV AT 18GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,

文件：58.78 Kbytes 页数：2 Pages

EXCELICS