NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifi er

NPN Epitaxial Planar Silicon Transistor Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=16GHz typ (VCE=5V) • High gain : |S21e|2=17.5dB typ (f=1GHz) • Halogen free compliance

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NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier

NPN Epitaxial Planar Silicon Transistor Features • Low-noise use : NF=1.2dB typ (f=1GHz). • High cut-off frequency : fT=16GHz typ (VCE=5V). • High gain : |S21e|2=17.5dB typ (f=1GHz).

文件：276.86 Kbytes 页数：9 Pages

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P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low-ON-reisistance. • 4V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

文件：278.87 Kbytes 页数：4 Pages

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PNP Epitaxial Planar Silicon Transistor DC / DC Converter Amplifi er

DC / DC Converter Amplifier Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm). • High allowable power dissipation. App

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Bipolar Transistor -12V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • Halogen free compliance Applications

文件：520.45 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor DC / DC Converter Amplifier

DC / DC Converter Amplifier Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • Halogem f

文件：245.12 Kbytes 页数：4 Pages

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Bipolar Transistor -30V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • Halogem free compliance Applications

文件：519.919 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm). • High allowable power dissipati

文件：236.36 Kbytes 页数：4 Pages

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Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation Applications • DC-DC converter, relay d

文件：510.87 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low-ON-reisistance. • 4V drive. • Halogen free compliance.

文件：277.45 Kbytes 页数：4 Pages

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