丝印：ENA；Package：8Ld2x3DFN；LDO with Low ISUPPLY, High PSRR

LDO with Low ISUPPLY, High PSRR ISL9005 is a high performance Low Dropout linear regulator capable of sourcing 300mA current. It has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • 300mA high performance LDO • Excel

文件：546.02 Kbytes 页数：9 Pages

RENESAS

瑞萨

丝印：ENA；Package：DO-214AA；Transient Voltage Suppressors

600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle):0.01 % Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time RoHS compliant Features Glass passivated chip High reliability application and automotive

文件：1.58939 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

Varactor Diode for FM Receiver Electronic Tuning Applications

Varactor Diode for FM Receiver Electronic Tuning Applications Features • Twin type varactor diode having an excellent large input characteristic, for use in FM electronic tuning applications • Small MCPH package permits SVC270-applied sets to be compact and slim • Possible to be shipped in tap

文件：435.37 Kbytes 页数：6 Pages

SANYO

三洋

Bi-CMOS LSI Buit-in 80mW Headphone amplifier BTL 10W횞2ch Crass-D Audio Power Amplifier

Overview The LV4901H is a 10W per channel stereo digital power amplifier that takes analog inputs. The LV4901H uses unique SANYO-developed feedback technology to achieve excellent audio quality despite being a class D amplifier and can be used to implement high quality flat display panel (FDP) ba

文件：212.31 Kbytes 页数：14 Pages

SANYO

三洋

Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process

文件：80.13 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single NMP

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single NMP Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment

文件：584.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4

RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 Features • Low-noise use : NF=1.1dB typ (f=2GHz) • High cut-off frequency : fT=25GHz typ (VCE=3V) • Low operating voltage • High gain : |S21e|2=17dB typ (f=2GHz) • Halogen free compliance

文件：372.93 Kbytes 页数：15 Pages

ONSEMI

安森美半导体

Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single PCP

Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter

文件：329.6 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Transistor 80V, 2.5A, Low VCE(sat), NPN Single PCP

Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation

文件：328.52 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA

Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter

文件：416.99 Kbytes 页数：9 Pages

ONSEMI

安森美半导体