型号：ISL9005IRJZ-T；Package：8Ld2x3DFN；LDO with Low ISUPPLY, High PSRR

LDO with Low ISUPPLY, High PSRR ISL9005 is a high performance Low Dropout linear regulator capable of sourcing 300mA current. It has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • 300mA high performance LDO • Excel

文件：546.02 Kbytes 页数：9 Pages

瑞萨

型号：ENA0076A；Varactor Diode for FM Receiver Electronic Tuning Applications

Varactor Diode for FM Receiver Electronic Tuning Applications Features • Twin type varactor diode having an excellent large input characteristic, for use in FM electronic tuning applications • Small MCPH package permits SVC270-applied sets to be compact and slim • Possible to be shipped in tap

文件：435.37 Kbytes 页数：6 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

型号：ENA0098；Bi-CMOS LSI Buit-in 80mW Headphone amplifier BTL 10W횞2ch Crass-D Audio Power Amplifier

Overview The LV4901H is a 10W per channel stereo digital power amplifier that takes analog inputs. The LV4901H uses unique SANYO-developed feedback technology to achieve excellent audio quality despite being a class D amplifier and can be used to implement high quality flat display panel (FDP) ba

文件：212.31 Kbytes 页数：14 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

型号：ENA0188B；Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process

文件：80.13 Kbytes 页数：4 Pages

安森美半导体

型号：ENA0269A；Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single NMP

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single NMP Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment

文件：584.87 Kbytes 页数：7 Pages

安森美半导体

型号：ENA0389A；RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4

RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 Features • Low-noise use : NF=1.1dB typ (f=2GHz) • High cut-off frequency : fT=25GHz typ (VCE=3V) • Low operating voltage • High gain : |S21e|2=17dB typ (f=2GHz) • Halogen free compliance

文件：372.93 Kbytes 页数：15 Pages

安森美半导体

型号：ENA0410A；Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single PCP

Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter

文件：329.6 Kbytes 页数：7 Pages

安森美半导体

型号：ENA0411A；Bipolar Transistor 80V, 2.5A, Low VCE(sat), NPN Single PCP

Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation

文件：328.52 Kbytes 页数：7 Pages

安森美半导体

型号：ENA0412A；Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA

Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter

文件：416.99 Kbytes 页数：9 Pages

安森美半导体

型号：ENA0413A；Bipolar Transistor 80V, 2.5A, Low VCE(sat), NPN Single TP/TP-FA

Bipolar Transistor 80V, 2.5A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drivers, lamp

文件：409.01 Kbytes 页数：9 Pages

安森美半导体