丝印：EO；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES * High DC current gain * Complementary to KTA1298

文件：619.08 Kbytes 页数：3 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：EO；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Small Flat Package Low Collector- Emitter Saturation Voltage

文件：1.49533 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：EO；Package：SOT-23；EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER,POWER SWITCHING)

LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=100∼320. • Low Saturation Voltage : VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA). • Suitable for Driver Stage of Small Motor. • Complementary to KTA1298. • Small Package.

文件：250.34 Kbytes 页数：2 Pages

KECKEC CORPORATION

KEC株式会社

丝印：EO；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain: hFE:100-320 ● Low saturation voltage. ● Suitable for driver stage of small motor. ● Complementary to KTC1298. ● Small package. APPLICATIONS SOT-23 ● Low frequency power amplifier application. ● Power switching application.

文件：216.87 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：EO；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Small Flat Package General Purpose Application

文件：1.46999 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：EO；Package：SOT-23；NPN Transistors

文件：582.76 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：EO；Package：SOT-89；Complementary to FTA1662

文件：91.86 Kbytes 页数：1 Pages

FS

丝印：EO；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

文件：185.7 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：EOE；Package：SOD323；ULTRA-LOW CAPACITANCE BIDIRECTIONAL TVS

Features  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±27kV  1 Channel of ESD Protection  Low Channel Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications r

文件：461.06 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：EO/EY；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain: hFE:100-320. ● Low saturation voltage. ● Suitable for driver stage of small motor. ● Complementary to KTA1298. ● Small package. APPLICATIONS ● Low frequency power amplifier application. ● Power switching application.

文件：1.08241 Mbytes 页数：2 Pages

LUGUANG

鲁光电子