PNP Epitaxial Planar Silicon Transistor DC / DC Converter Amplifier

DC / DC Converter Amplifier Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • Halogem f

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SANYO

三洋

Bipolar Transistor -30V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation • Halogem free compliance Applications

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ONSEMI

安森美半导体

Low Loss Test RA SMA Male to N Male Cable LL335i Coax

Features: • Max Frequency 18 GHz • Shielding Effectivity > 95 dB • 83% Phase Velocity • Triple Shielded • FEP Jacket • 500 Mating Cycles • 83% Velocity of Propagation Shielding effectiveness 95 dB Maximum VSWR is 1.40:1 to 18 GHz Minimum Bend Radius of 1.5 inches Operating Tem

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FAIRVIEW

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 79A@ TC=25℃ · Drain Source Voltage -VDSS=100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, · Half Bridge · PFC and Other Boost Converter · Buck Converterh

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ISC

无锡固电

Darlington Transistor Array

Overview These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in equipment because the specially designed 14-pin DIP makes suc

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SANYO

三洋