Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single MCPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm) • High allowable power dissipation Applications • DC-DC converter, relay d

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ONSEMI

安森美半导体

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single MCPH6

ONSEMI

安森美半导体

Stay Connected with Heyco Bushings, Grommets, Bumpers Feet

文件：74.99 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Rubber Grommets

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HEYCO

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 140mΩ(Max)@VGS= 10V APPLICATIONS · Battery Chargers · DC Choppers · Power Factor Correction (PFC) · DC-DC Converters · High Speed Power Switching Application

文件：584.07 Kbytes 页数：3 Pages

ISC

无锡固电