8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

文件：1.25252 Mbytes 页数：40 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

文件：1.25252 Mbytes 页数：40 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

文件：1.25252 Mbytes 页数：40 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

文件：1.25252 Mbytes 页数：40 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

文件：1.25252 Mbytes 页数：40 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

文件：1.25252 Mbytes 页数：40 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

文件：1.25252 Mbytes 页数：40 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

文件：1.25252 Mbytes 页数：40 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

文件：1.25252 Mbytes 页数：40 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件：407.14 Kbytes 页数：41 Pages

EON

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