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EN29LV160C

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast

文件:435.87 Kbytes 页数:44 Pages

EON

宜扬科技

EN29LV160CB-70BIP

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast

文件:435.87 Kbytes 页数:44 Pages

EON

宜扬科技

EN29LV160CB-70TIP

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast

文件:435.87 Kbytes 页数:44 Pages

EON

宜扬科技

EN29LV160CT-70BIP

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast

文件:435.87 Kbytes 页数:44 Pages

EON

宜扬科技

EN29LV160CT-70TIP

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

GENERAL DESCRIPTION The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast

文件:435.87 Kbytes 页数:44 Pages

EON

宜扬科技

EN29LV160C

Parallel NOR Flash

ESMT

晶豪科技

技术参数

  • Description:

    2.7~3.6V

  • Speed:

    70ns 

  • Package:

    48-pin TSOP; 48-ball 6mmx8mm TFBGA; 48-ball 4mmx6mm WFBGA 

  • Sample:

    NOW 

  • MP:

    NOW 

  • DataSheet:

     

供应商型号品牌批号封装库存备注价格
EON
16+
BGA
4000
进口原装现货/价格优势!
询价
ENTROPIC
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
询价
EON
25+23+
FBGA48
20678
绝对原装正品全新进口深圳现货
询价
EON
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
EON
20+
TSOP
11520
特价全新原装公司现货
询价
ESMT
24+
TFBGA-48
80000
原装现货
询价
EONSILICO
23+
TSOP48
15000
一级代理原装现货
询价
EON
24+
FBGA48
35200
一级代理分销/放心采购
询价
EON
2447
FBGA48
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
EON
24+
TSOP48
9600
原装现货,优势供应,支持实单!
询价
更多EN29LV160C供应商 更新时间2025-10-11 15:14:00