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EN29LV160AB-70TCP

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

文件:930.45 Kbytes 页数:43 Pages

EON

宜扬科技

EN29LV160AB-70TI

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

文件:930.45 Kbytes 页数:43 Pages

EON

宜扬科技

EN29LV160AB-70TIP

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

文件:930.45 Kbytes 页数:43 Pages

EON

宜扬科技

EN29LV160AB-70BC

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

文件:930.45 Kbytes 页数:43 Pages

EON

宜扬科技

EN29LV160AB-70BI

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

文件:930.45 Kbytes 页数:43 Pages

EON

宜扬科技

EN29LV160AB-70BIP

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

文件:930.45 Kbytes 页数:43 Pages

EON

宜扬科技

供应商型号品牌批号封装库存备注价格
EON
25+
10
全新原装!优势库存热卖中!
询价
EON
25+
TSOP-48
25000
全新原装现货,假一赔十
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EON
23+
BGA
6200
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
EON
24+
TSOP48
4270
询价
EON
0612+
TSOP
150
原装
询价
EON
24+/25+
645
原装正品现货库存价优
询价
EON
24+
TSOP48
121
原装现货假一罚十
询价
EON
2016+
TSOP48
1757
只做原装,假一罚十,公司优势内存型号!
询价
EON
6200
TSOP
17
100%原装正品现货
询价
EON
0714+
TSOP-48
1
原装现货海量库存欢迎咨询
询价
更多EN29LV160AB-70TCP供应商 更新时间2026-10-6 16:20:00