512 Kbit Serial Flash Memory with Boot and Parameter Sectors

GENERAL DESCRIPTION The EN25B05 is a 512 K-bit (64K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operat

文件：386.02 Kbytes 页数：30 Pages

EON

宜扬科技

Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA

Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers

文件：401.95 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

PIN Diode for FM/AM Electronic Tuning AGC Drive Use

Diffused Junction Type Silicon Diode Features • Especially suited for use in hybrid ICs. Contains two chips connected in series. • Small interterminal capacitance. • Reverse Voltage : 50V. • Forward Current : 50mA. Use • AGC output drive of FM/AM electronic tuning IC.

文件：46.02 Kbytes 页数：2 Pages

SANYO

三洋

Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP

Features • Adoption of FBET, MBIT processes • Low collector to emitter saturation voltage • Large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applicaitons • DC-DC converters, motor drivers, relay drivers, lamp d

文件：281.84 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

512 Kbit Serial Flash Memory with Boot and Parameter Sectors

GENERAL DESCRIPTION The EN25B05 is a 512 K-bit (64K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operat

文件：386.02 Kbytes 页数：30 Pages

EON

宜扬科技

512 Kbit Serial Flash Memory with Boot and Parameter Sectors

GENERAL DESCRIPTION The EN25B05 is a 512 K-bit (64K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operat

文件：386.02 Kbytes 页数：30 Pages

EON

宜扬科技

512 Kbit Serial Flash Memory with Boot and Parameter Sectors

GENERAL DESCRIPTION The EN25B05 is a 512 K-bit (64K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operat

文件：386.02 Kbytes 页数：30 Pages

EON

宜扬科技

512 Kbit Serial Flash Memory with Boot and Parameter Sectors

GENERAL DESCRIPTION The EN25B05 is a 512 K-bit (64K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operat

文件：386.02 Kbytes 页数：30 Pages

EON

宜扬科技

512 Kbit Serial Flash Memory with Boot and Parameter Sectors

GENERAL DESCRIPTION The EN25B05 is a 512 K-bit (64K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operat

文件：386.02 Kbytes 页数：30 Pages

EON

宜扬科技

512 Kbit Serial Flash Memory with Boot and Parameter Sectors

GENERAL DESCRIPTION The EN25B05 is a 512 K-bit (64K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operat

文件：386.02 Kbytes 页数：30 Pages

EON

宜扬科技