EMF30N02H

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS20V RDSON(MAX.)30mΩ ID10A Pb‐FreeLeadPlating&HalogenFree

EMF30N02J

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

EMF30N02JS

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS20V RDSON(MAX.)30mΩ ID5A Pb‐FreeLeadPlating&HalogenFree

EMF30N02P

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS20V RDSON(MAX.)30mΩ ID5A Pb‐FreeLeadPlating&HalogenFree

G30N02K

Powerswitchingapplication

Description TheG30N02usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application Powerswitchingapplication Loadswitching LEDpowersupply

G30N02T

Powerswitchingapplication

Description TheG30N02usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application Powerswitchingapplication Loadswitching LEDpowersupply

HM30N02D

Hardswitchedandhighfrequencycircuits

HM30N02K

N-ChannelEnhancementModePowerMOSFET

HM30N02Q

Loadswitching

NTD30N02

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=24V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.