N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 500V RDSON (MAX.) 0.6Ω ID 14A UIS, 100 Tested Pb‐Free Lead Plating & Halogen Free

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EXCELLIANCE

杰力科技

Power MOSFETs-N Channel

Excelliance MOS

杰力科技

TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM

This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM mo

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MOTOROLA

摩托罗拉

50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival

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ZETEX

50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival

文件：264.27 Kbytes 页数：6 Pages

ZETEX