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EMB70N08V

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件:194.03 Kbytes 页数:5 Pages

EXCELLIANCE

杰力科技

EMB70N08V

Power MOSFETs-N Channel

Excelliance MOS

杰力科技

FQA70N08

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:666.43 Kbytes 页数:8 Pages

Fairchild

仙童半导体

FQA70N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=77.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件:369.36 Kbytes 页数:2 Pages

ISC

无锡固电

FQAF70N08

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:662.69 Kbytes 页数:8 Pages

Fairchild

仙童半导体

技术参数

  • Channel:

    Single N

  • BVDSS(V):

    80

  • VGS(±V):

    20

  • ID(A):

    6

  • RDS(ON)(10V) Max.(mΩ):

    65

  • RDS(ON)(5V) Max.(mΩ):

    85

  • RDS(ON)(4.5V) Max.(mΩ):

     

  • RDS(ON)(2.5V) Max.(mΩ):

     

  • Qg(10V)Typ.(nC):

    15

  • CissTyp.(pF):

    1110

供应商型号品牌批号封装库存备注价格
EMC/杰力
23+
DFN33
50000
全新原装正品现货,支持订货
询价
EMC
23+
DFN
50000
全新原装正品现货,支持订货
询价
EMC
23+
EDFN3x3
17685
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
EMC
16+
DFN
6765
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
EMC/杰力
24+
NA/
3987
优势代理渠道,原装正品,可全系列订货开增值税票
询价
EMC/杰力
23+
DFN33
7000
询价
EMC/杰力
24+
DFN33
60000
全新原装现货
询价
NK/南科功率
2025+
EDFN3*3
986966
国产
询价
EMC/杰力
2511
EDFN3X3
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
EMC杰力
SOT252
22+
6000
十年配单,只做原装
询价
更多EMB70N08V供应商 更新时间2025-12-1 11:01:00