NTB60N06L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTB60N06LG

PowerMOSFET60Amps,60Volts,LogicLevelN?묬hannelTO??20andD2PAK

NTP60N06

N-Channel60-V(D-S)MOSFET

NTP60N06

60V,60A,N-ChannelTO-220andD2PAK

NTP60N06G

60V,60A,N-ChannelTO-220andD2PAK

NTP60N06G

N-Channel60-V(D-S)MOSFET

NTP60N06L

PowerMOSFET60Amps,60Volts,LogicLevelN?묬hannelTO??20andD2PAK

NTP60N06LG

PowerMOSFET60Amps,60Volts,LogicLevelN?묬hannelTO??20andD2PAK

NVB60N06

MOSFET–Power,N-Channel,D2PAK60V,60A

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •AEC−Q101QualifiedandPPAPCapable−NVB60N06 •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •C

OM60N06SA

LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr