MTP60N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP60N06HD

TMOSPOWERFET60AMPERES60VOLTSRDS(on)=0.014OHM

Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies

MTP60N06HD

N-Channel60-V(D-S)MOSFET

MTP60N06HD

N?묬hannelPowerMOSFET

NP60N06MLK

60V??60A??N-channelPowerMOSFET

NP60N06MLK

60V–60A–N-channelPowerMOSFETApplication:Automotive

Description NP60N06MLKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)1=8.1mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2400pFTYP.(VDS=25V) Designedforautomotiveapplicationand

NP60N06PDK

N-channelPowerMOSFET

NP60N06PDK

60V–60A–N-channelPowerMOSFETApplication:Automotive

Description NP60N06PDKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)1=7.9mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2400pFTYP.(VDS=25V) Designedforautomotiveapplicationand

NP60N06PLK

60V??60A??N-channelPowerMOSFET

NP60N06PLK

60V–60A–N-channelPowerMOSFETApplication:Automotive

Description NP60N06PLKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)1=7.9mMAX.(VGS=10V,ID=30A) LowCiss:Ciss=2400pFTYP.(VDS=25V) Designedforautomotiveapplicationand