MTB50P03HDL

TMOSPOWERFETLOGICLEVEL50AMPERES30VOLTS

HDTMOSE-FET™HighEnergyPowerFETD2PAKforSurfaceMount P-channelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponen

MTB50P03HDL

P-ChannelPowerMOSFET

MTB50P03HDLG

P-ChannelPowerMOSFET

MTB50P03HDLG

PowerMOSFET50Amps,30Volts,LogicLevelP?묬hannelD2PAK

MTP50P03HDL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP50P03HDL

TMOSPOWERFETLOGICLEVEL50AMPERES30VOLTSRDS(on)=0.025OHM

HDTMOSE-FETPowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecover

MTP50P03HDL

PowerMOSFET50Amps,30Volts,LogicLevelP-ChannelTO-220

MTP50P03HDLG

PowerMOSFET50Amps,30Volts,LogicLevelP-ChannelTO-220

NP50P03YDG

ProductScoutAutomotive

NP50P03YDG

MOSFIELDEFFECTTRANSISTOR

Description TheNP50P03YDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=8.4mΩMAX.(VGS=−10V,ID=−25A) •LowCiss:Ciss=2300pFTYP.(VDS=−25V,VGS=0V) •Designedforautomotiveapp