EMB36N10A

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS100V RDSON(MAX.)36mΩ ID30A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMD36N10A

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS100V RDSON(MAX.)36mΩ ID30A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

MTW36N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=58mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NP36N10SDE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=33mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NP36N10SDE

ProductScoutAutomotive

NP36N10SDE

MOSFIELDEFFECTTRANSISTOR

Description TheNP36N10SDEisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)1=33mΩMAX.(VGS=10V,ID=18A) RDS(on)2=39mΩMAX.(VGS=4.5V,ID=18A) •LowCiss:Ciss=3500pFTYP.(VDS=2

ST36N10D

NChannelEnhancementModeMOSFET

UTT36N10

36A,100VN-CHANNELPOWERMOSFET