MOSFET-复合沟道型

ELM-Tech

台舟电子

6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION M54539P six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. FEATURES ● Medium breakdown voltage (BVCEO ≥ 20V) ● High-current driving (Ic(max) = 700mA

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Mitsubishi

三菱电机

INTEL(英特尔)

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INTEL(英特尔)

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SMD

NCC/黑金刚

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