首页 >EFC6602R-A-TR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
N-andP-ChannelV(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
PowerMOSFET N-ChannelPowerMOSFET12V,18A,5.9mΩ,DualEFCP Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Lithium-ionbatterycharginganddischargingswitch N-ChannelSiliconMOSFETLithium-ionbatterycharginganddischargingswitch Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
N-ChannelPowerMOSFET12V,18A,5.9m廓,DualEFCP N-ChannelPowerMOSFET12V,18A,5.9mΩ,DualEFCP Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET N-ChannelPowerMOSFET12V,18A,5.9mΩ,DualEFCP Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET12V,18A,5.9m廓,DualEFCP N-ChannelPowerMOSFET12V,18A,5.9mΩ,DualEFCP Features •2.5Vdrive •Common-draintype •2KVESDHBM •Protectiondiodein •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HighlyIntegratedGreen-ModePWMController | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
P-channelandN-channelComplementaryMOSFETS | FS First Silicon Co., Ltd | FS | ||
DualChannelSynchronous-RectifiedBuckMOSFETDriver Features •DrivesFourN-channelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevices •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small14-LeadSOICPackage •5Vto12VGate-DriveVoltagesforOptimalEfficiency •Three-State | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
DualChannelSynchronous-RectifiedBuckMOSFETDriver TheHIP6602isahighfrequency,twopowerchannelMOSFETdriverspecificallydesignedtodrivefourpowerN-ChannelMOSFETsinasynchronous-rectifiedbuckconvertertopology.ThesedriverscombinedwithaHIP63xxseriesofMulti-PhaseBuckPWMcontrollerandIntersil’sUltraFETs®formacomplete | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
DualChannelSynchronousRectifiedBuckMOSFETDriver TheHIP6602Aisahighfrequency,twopowerchannelMOSFETdriverspecificallydesignedtodrivefourpowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.Thisdeviceisavailableineithera14leadSOICora16leadQFNpackagewithaPADtothermallyenhancethepackage. | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
DualChannelSynchronousRectifiedBuckMOSFETDriver Features •DrivesFourN-channelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevices •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small14-LeadSOICPackage •Smaller16-LeadQFNThermallyEnhancedPackage •5Vto12VGate-Dri | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
DualChannelSynchronousRectifiedBuckMOSFETDriver Features •DrivesFourN-channelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevices •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small14-LeadSOICPackage •Smaller16-LeadQFNThermallyEnhancedPackage •5Vto12VGate-Dri | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
DualChannelSynchronousRectifiedBuckMOSFETDriver TheHIP6602Aisahighfrequency,twopowerchannelMOSFETdriverspecificallydesignedtodrivefourpowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.Thisdeviceisavailableineithera14leadSOICora16leadQFNpackagewithaPADtothermallyenhancethepackage. | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
DualChannelSynchronousRectifiedBuckMOSFETDriver TheHIP6602Aisahighfrequency,twopowerchannelMOSFETdriverspecificallydesignedtodrivefourpowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.Thisdeviceisavailableineithera14leadSOICora16leadQFNpackagewithaPADtothermallyenhancethepackage. | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
DualChannelSynchronousRectifiedBuckMOSFETDriver Features •DrivesFourN-channelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevices •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small14-LeadSOICPackage •Smaller16-LeadQFNThermallyEnhancedPackage •5Vto12VGate-Dri | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
DualChannelSynchronousRectifiedBuckMOSFETDriver Features •DrivesFourN-channelMOSFETs •AdaptiveShoot-ThroughProtection •InternalBootstrapDevices •SupportsHighSwitchingFrequency -FastOutputRiseTime -PropagationDelay30ns •Small14-LeadSOICPackage •Smaller16-LeadQFNThermallyEnhancedPackage •5Vto12VGate-Dri | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
DualChannelSynchronousRectifiedBuckMOSFETDriver TheHIP6602Aisahighfrequency,twopowerchannelMOSFETdriverspecificallydesignedtodrivefourpowerN-ChannelMOSFETsinasynchronousrectifiedbuckconvertertopology.Thisdeviceisavailableineithera14leadSOICora16leadQFNpackagewithaPADtothermallyenhancethepackage. | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
详细参数
- 型号：
EFC6602R-A-TR
- 制造商：
ON Semiconductor
- 功能描述：
NCH+NCH 2.5V DRIVE SERIES - Tape and Reel
- 功能描述：
IC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2016+ |
SMD |
4000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ON |
2016+ |
SMD |
6523 |
只做进口原装现货!假一赔十! |
询价 | ||
ON |
2017+ |
6-EFCP |
45826 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
ON |
2021+ |
SMD |
7040 |
百分百原装正品 |
询价 | ||
ON |
22+23+ |
6-EFCP |
78168 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
ONSemiconductor |
2019+ |
6-EFCP(2.7x1.81) |
65500 |
原装正品货到付款,价格优势! |
询价 | ||
ON |
23+ |
6-EFCP |
999999 |
原装正品现货量大可订货 |
询价 | ||
ON/安森美 |
1801+ |
EFCP-6 |
5960 |
原装正品-现货-绝对有货-实单价可谈 |
询价 | ||
ON |
19+ |
6-EFCP |
20000 |
4800 |
询价 | ||
ON |
23+ |
6-EFCP |
20000 |
原厂原装正品现货 |
询价 |
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