丝印：EFA；Package：8Ld2x3DFN；LDO with Low ISUPPLY, High PSRR

LDO with Low ISUPPLY, High PSRR ISL9001 is a high performance Low Dropout linear regulator capable of sourcing 300mA current. It has a low standby current and high-PSRR and is stable with an output capacitance of 1µF to 10µF with an ESR of up to 200mΩ. The ISL9001 has a very high PSRR of 90dB an

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • VERY HIGH fmax: 100GHz • +18.5dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PR

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Excelics

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +18.5dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADV

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +18.5dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAX

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Excelics

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +18.0dBm TYPICAL OUTPUT POWER • 11.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.6 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz • 0.3 X 240 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIEN

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Excelics

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +21.0dBm TYPICAL OUTPUT POWER • 11.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIEN

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Excelics

Low Distortion GaAs Power FET

FEATURES • None-Hermetic Low Cost Ceramic 70mil Package • +20.0 dBm Output Power at 1dB Compression • 10.0 dB Power Gain at 12GHz • 7.0 dB Power Gain at 18GHz • Typical 1.50 dB Noise Figure and 10.0 dB Associated Gain at 12GHz • 0.3 x 250 Micron Recessed “Mushroom” Gate • Si3N4 Passivation

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Excelics

Low Distortion GaAs Power FET

FEATURES • None-Hermetic Low Cost Ceramic 70mil Package • +20.0 dBm Output Power at 1dB Compression • 10.0 dB Power Gain at 12GHz • 7.0 dB Power Gain at 18GHz • Typical 1.50 dB Noise Figure and 10.0 dB Associated Gain at 12GHz • 0.3 x 250 Micron Recessed “Mushroom” Gate • Si3N4 Passivation

文件：107.56 Kbytes 页数：3 Pages

Excelics

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +20.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVAN

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High Gain GaAs Power FET

High Gain GaAs Power FET • +20.0dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 5mA PER BIN RANGE

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