FJV4105R

PNPEpitaxialSiliconTransistor

SwitchingApplication(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit •BuiltinbiasResistor(R1=4.7KΩ,R2=10KΩ) •ComplementtoFJV3105R

FKS4105

40VP-ChannelMOSFET

Features ⚫AdvancedTrenchMOSTechnology ⚫LowGateCharge ⚫100EASGuaranteed ⚫GreenDeviceAvailable Applications ⚫LoadSwitches ⚫HardSwitchingandHighSpeedCircuit

HO-NP-4105

CurrentTransducer

HO-P-4105

CurrentTransducer

IIRFR4105

N-ChannelMOSFETTransistor

•DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤45mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IIRFR4105Z

N-ChannelMOSFETTransistor

•DESCRITION •HighSpeedPowerSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤24.5mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IRFL4105

PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=3.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFL4105

UltraLowOn-Resistance

Description TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechniques.Itsuniquepackagedesignallowsforeasyautomaticpickand-placeaswithotherSOTorSOICpackagesbuthastheaddedadvantageofimprovedthermalperformanceduetoanenla

IRFL4105

60VN-ChannelIRFL4105

GeneralDescription TheselogiclevelN-ChannelenhancementThisvery highdensityprocessisespeciallytailoredto minimizeon-stateresistanceandprovide superior switchingperformance,andwithstandhigh energypulse intheavalancheandcommutation modes. Thesedevicesareparticula

IRFL4105PBF

HEXFET짰PowerMOSFET