Current Transducer

文件：1.33861 Mbytes 页数：15 Pages

LEM

莱姆

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤45mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：334.94 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High Speed Power Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤24.5mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.34 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：168.77 Kbytes 页数：9 Pages

IRF