丝印：ECH；Package：DO-214AA；Automotive and High Reliability TVS Diodes

文件：1.10451 Mbytes 页数：5 Pages

YINT

音特电子

Schottky Barrier Diode

Construction: Schottky barrier Diode Application : High Frequency Rectification

文件：112.55 Kbytes 页数：6 Pages

NIEC

Schottky Barrier Diode

For High Frequency Rectification FEATURES * High VRM SBD * Low Forward Voltage Drop and Low Noise * Fully Molded Isolation * Dual Diodes Cathode Common

文件：75.19 Kbytes 页数：6 Pages

NIEC

Schottky Barrier Diode

Features • Low forward volatage drop • High frequency operation • RoHS compliant • Epoxy Resin (UL94V-0 recognized) Applications • Secondary side rectification • DC/DC converters • Re-Circulating Diode • Freewheeling diodes

文件：717.13 Kbytes 页数：7 Pages

KSS

京瓷

TRIODE-HEPTODE

[RFT] TRIODE-HEPTODE

文件：187.37 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • High allowable power dissipation. • Halogen free compliance. Applications • High-power

文件：286.57 Kbytes 页数：4 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • High allowable power dissipation. • Halogen free compliance. • IECO is guaranteed for preventing reverse flow

文件：296.35 Kbytes 页数：5 Pages

SANYO

三洋

Bipolar Transistor

Bipolar Transistor –30V, –12A, Low VCE(sat), PNP Single ECH8 Features • Adoption of FBET, MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • High allowable power dissipation • Halogen free compliance • IECO is guaranteed for p

文件：315.72 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor –30V, –12A, Low VCE(sat), PNP Single ECH8 Features • Adoption of FBET, MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • High allowable power dissipation • Halogen free compliance • IECO is guaranteed for p

文件：315.72 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

P-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive.

文件：39.58 Kbytes 页数：4 Pages

SANYO

三洋