Bipolar Transistor -50V, -5A, Low VCE(sat) PNP Dual ECH8

Bipolar Transistor –50V, –5A, Low VCE(sat) PNP Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Halogen free compliance

文件：310.01 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor Motor Drive Applications

PNP Epitaxial Planar Silicon Transistor Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Halogen free compliance

文件：329.42 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor -50V, -5A, Low VCE(sat) PNP Dual ECH8

Bipolar Transistor –50V, –5A, Low VCE(sat) PNP Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Halogen free compliance

文件：310.01 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor Motor Drive Applications

PNP Epitaxial Planar Silicon Transistor Features • Composite type, facilitating high-density mounting. • Mounting height 0.9mm. • Halogen free compliance.

文件：298.73 Kbytes 页数：4 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor Motor Drive Applications

PNP Epitaxial Planar Silicon Transistor Features • Composite type, facilitating high-density mounting. • Mounting height 0.9mm. • Halogen free compliance.

文件：297.6 Kbytes 页数：4 Pages

SANYO

三洋

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • Suitable for lithim-ion battery use. • Drain common specification. • 2.5V drive.

文件：55.67 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • 2.5V drive • Common-drain type • Protection diode in • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Halogen free compliance

文件：60.96 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • Built-in gate protection resistor. • 2.5V drive. • Best suited for LiB charging and discharging Switch. • Common-drain type.

文件：37.97 Kbytes 页数：4 Pages

SANYO

三洋

N-Channel Power MOSFET

Features • 2.5V drive • Common-drain type • Protection diode in • Best suited for LiB charging and discharging switch • Halogen free compliance

文件：305.31 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel Silicon MOSFET

Features • 2.5V drive • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance • Protection diode in

文件：282.9 Kbytes 页数：4 Pages

SANYO

三洋