ECF13N50T资料datasheet下载行情报价E-CMOS-114ic电子网

首页 >ECF13N50T>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
ECF13N50T	文件：300 bytes Page：1 Pages	MOSFET	E-CMOS 飞虹高科	E-CMOS
FDP13N50F	文件：621.07 Kbytes Page：9 Pages	N-Channel MOSFET 500V, 12A, 0.54廓 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig 文件：621.07 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild
FDP13N50F	文件：332.34 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID =12A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.54Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：332.34 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
FDPF13N50FT	文件：621.07 Kbytes Page：9 Pages	N-Channel MOSFET 500V, 12A, 0.54廓 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig 文件：621.07 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild

更多ECF13N50T供应商更新时间2022-12-6 9:27:00