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EC737509J7中文资料80V,70A N-channel MOSFET数据手册E-CMOS规格书
EC737509J7规格书详情
描述 Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
特性 Features
▓ Advanced MOSFET process technology
▓ Special designed for PWM, load switching and
general purpose applications
▓ Ultra low on-resistance with low gate charge
▓ Fast switching and reverse body recovery
▓ 150℃ operating temperature
技术参数
- 制造商编号
：EC737509J7
- 生产厂家
：E-CMOS
- VDS(V)
：80
- VGS(±V)
：20
- RDS(ON)@VGS
：7.5Ω@10V
- ID(A)
：70
- Package
：PQFN
