60V 60A N-Channel

文件：487.57 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

60V 60A N-Channel

文件：487.57 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

60V ,60A N-Channel

文件：368.1 Kbytes 页数：7 Pages

E-CMOS

飞虹高科

60V ,60A N-Channel

文件：368.1 Kbytes 页数：7 Pages

E-CMOS

飞虹高科

60V ,40A N-Channel

文件：170.53 Kbytes 页数：4 Pages

E-CMOS

飞虹高科

60V ,40A N-Channel

文件：170.53 Kbytes 页数：4 Pages

E-CMOS

飞虹高科

60V,60A N-Channel MOSFET

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other n  Advanced MOSFET process technology\nn  Special designed for PWM, load switching and\n     general purpose applications\nn  Ultra low on-resistance with low gate charge\nn  Fast switching and reverse body recovery\nn  175℃ operating temperature\n ;

E-CMOS

飞虹高科

60V,40A N-channel MOSFET

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other n  Advanced MOSFET process technology\nn  Special designed for PWM, load switching and\n     general purpose applications\nn  Ultra low on-resistance with low gate charge\nn  Fast switching and reverse body recovery\nn  175℃ operating temperature\n \n;

E-CMOS

飞虹高科