-30V, -4.1A P-Channel MOSFET

文件：288.74 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

-30V,-4.1A P-channel MOSFET

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other n  Advanced MOSFET process technology\nn  Special designed for PWM, load switching and\n     general purpose applications\nn  Ultra low on-resistance with low gate charge\nn  Fast switching and reverse body recovery\nn  150℃ operating temperature\n \n;

E-CMOS

飞虹高科

丝印：3339；Package：SOT23-3L；-30V, -4.1A P-Channel MOSFET

文件：288.74 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

LCC

移远

上传：深圳市展煜电子有限公司

LCC

移远

上传：深圳市展煜电子有限公司