-20V,-3A,P-Channel MOS

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other ◆ Advanced MOSFET process technology\n◆ Special designed for PWM, load switching and general purpose applications\n◆ Ultra low on-resistance with low gate charge\n◆ Fast switching and reverse body recovery\n◆ 150℃ operating temperature;

E-CMOS

飞虹高科

丝印：2315；Package：SOT-23；P-Channel MOS

文件：477.21 Kbytes 页数：4 Pages

E-CMOS

飞虹高科

Channel Enhancement Mode MOSFET

EC732315A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low Voltage power management, such as smart Phone and notebook computer and other battery powered circuits, and low in-line power los • -20V/-4.9A,RDS(ON)=45mΩ@VGS=-4.5V\n• -20V/-2.2A,RDS(ON)=85mΩ@VGS=-1.8V\n• Exceptional on-resistance and maximum DC current capability\n• Portable Equipment\n• Net Working System\n;

E-CMOS

飞虹高科

LCC

移远

上传：深圳市展煜电子有限公司

LCC

移远

上传：深圳市展煜电子有限公司