-20V,-3A,P-Channel MOS

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other ◆ Advanced MOSFET process technology\n◆ Special designed for PWM, load switching and general purpose applications\n◆ Ultra low on-resistance with low gate charge\n◆ Fast switching and reverse body recovery\n◆ 150℃ operating temperature;

E-CMOS

飞虹高科

丝印：2315；Package：SOT-23；P-Channel MOS

文件：477.21 Kbytes 页数：4 Pages

E-CMOS

飞虹高科

移远
LCC

移远

上传：深圳市展煜电子有限公司

移远
LCC

移远

上传：深圳市展煜电子有限公司

MICROCHIP
40VQFN6X6

Microchip

微芯科技

上传：深圳市创新迹电子有限公司