P chanel MOSFET

文件：512.559 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

-20V/-3A P-channel MOSFET

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other ◆ Advanced MOSFET process technology\n◆ Special designed for PWM, load switching and\n     general purpose applications\n◆ Ultra low on-resistance with low gate charge\n◆ Fast switching and reverse body recovery\n◆ 150℃ operating temperature;

E-CMOS

飞虹高科

丝印：2301；Package：SOT23；P chanel MOSFET

文件：512.559 Kbytes 页数：6 Pages

E-CMOS

飞虹高科

20V,-2.8A,P chanel MOSFET

The EC732301B uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operationwith gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.\n\n \n\n ● VDS = -20V,ID = -2.8A\n        RDS(ON) < 150mΩ @ VGS=-2.5V\n        RDS(ON) < 100mΩ @ VGS=-4.5V\n    ● High Power and current handing capability\n    ● Lead free product is acquired\n    ● Surface Mount Package\n;

E-CMOS

飞虹高科