E4D20120D

Marking：E4D20120；Package：TO-247-3；Silicon Carbide Schottky Diode E-Series Automotive

Features •4thGenerationSiCMergedPINSchottkyTechnology •ZeroReverseRecoveryCurrent •High-FrequencyOperation •Temperature-IndependentSwitchingBehavior •AEC-Q101QualifiedandPPAPCapable •HumidityResistant Benefits •ReplaceBipolarwithUnipolarRectifiers •Essentially

E4M0013120K

Marking：E4M0013120K；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features •E4MgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery

E4M0015075J2

Marking：E4M0015075J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features •750VSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •4.7mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr)

E4M0025075J2

Marking：E4M0025075J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features •750VSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •4.7mmofcreepagedistancebetweendrainandsource •Highblockingvoltagewithlowon-resistance •High-speedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr)

IDWD40E120D7

Marking：E40MD7；Package：PG-TO247-2-STD-NA8.8；Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode for both Industrial and Home Appliance applications

Features •VRRM=1200V •IF=40A •1200Vemittercontrolledtechnology •MaximumjunctiontemperatureTvjmax=175°C •Lowforwardvoltage(VF) •Lowreverserecoverycharge •Ultrafastrecoverytimes •Softrecoverycharacteristics •Pb-freeleadplating;RoHScompliant •Humidity

IDWD40E65E7

Marking：E40EE7；Package：PG-TO247-2-STD-NA8.8；The Soft 650 V Emitter Controlled Si Diode 7 offers improved reliability for both Industrial and Home Appliance applications

Features •VRRM=650V •IF=40A •Lowandtemperaturestableforwardvoltage(VF) •Verysoftandfastrecovery •Lowreverserecoverycurrent(Irrm) •Humidityrobustdesign •Cosmicrayruggedness •MaximumjunctiontemperatureTvjmax=175°C •QualifiedaccordingtoJEDECfortarge

RT9011-GMPQW

Marking：E4*；Package：WDFN-82x2；Portable Power Management 300mA Dual LDO Regulator

GeneralDescription TheRT9011isadualchannel,lownoise,andlowdropoutregulatorsourcingupto300mAateachchannel.Therangeofoutputvoltageisfrom1.2Vto3.6Vbyoperatingfrom2.5Vto5.5Vinput. Features •WideOperatingVoltageRanges:2.5Vto5.5V •Low-NoiseforRFApplica

RT9014A-GPPQW

Marking：E4-**；Package：WDFN-103x3；Ultra Low Noise 300mA Dual LDO Regulator with POR, NMOS Driver and Requiring No Bypass Capacitor

GeneralDescription RT9014/Aisadualchannel,lownoise,andlowdropoutwiththesourcingabilityupto300mA,anopendraindriverandpower-onresetfunction.Theopen-drainoutputiscapableofsinking150mAforLEDbacklightingapplications. Features •WideOperatingVoltageRang

AZ431AK-BTRE1

Marking：E4A；Package：SOT-25；ADJUSTABLE PRECISION SHUNT REGULATORS

AZ431AK-BTRE1

Marking：E4A；Package：SOT-25；ADJUSTABLE PRECISION SHUNT REGULATORS